Al2O3 thin films deposited by thermal atomic layer deposition: Characterization for photovoltaic applications

THIN SOLID FILMS

卷:617

Article; Proceedings Paper

Barbos, Corina¹  Blanc-Pelissier, Daniele¹  Fave, Alain¹  Botella, Claude¹  Regreny, Philippe¹  Grenet, Genevieve¹  Blanquet, Elisabeth²  Crisci, Alexandre²  Lemiti, Mustapha¹ 

[1] Univ Lyon, INL, UMR5270, CNRS,Ecole Cent Lyon,INSA Lyon, F-59621 Villeurbanne, France

[2] Sci & Ingn Mat & Proc SIMaP, F-38402 St Martin Dheres, France

关键词: Aluminum oxide;    Atomic layer deposition;    Thin films;    Interface characterization;    Surface passivation;   

DOI  :  10.1016/j.tsf.2016.02.049

来源: Elsevier

【 摘 要 】

Al2O3 thin films with thickness between 2 and 100 nm were synthetized at 250 degrees C by thermal atomic layer deposition on silicon substrates. Characterizations of as-deposited andannealed layers were carried out using ellipsometry, X-ray reflectivity, and X-ray photoelectron spectroscopy. A silicon-rich SiOx layer at the interface between Si and Al2O3 was introduced in the optical models to fit the experimental data. Surface passivation performances of Al2O3 layers deposited on n-type float-zone monocrystalline silicon were investigated as a function of thickness and post-deposition annealing conditions. Surface recombination velocity around 2 cm.s-1 was measured after the activation of the negative charges at the Si/Al2O3 interface under optimized annealing at 400 degrees C for 10 min. The evolution of the interface layer and of the material properties with the thermal treatment was studied. (C) 2016 Elsevier B.V. All rights reserved.

【 授权许可】

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