Uniformity of gallium doped zinc oxide thin film prepared by pulsed laser deposition

THIN SOLID FILMS

卷:518

Article; Proceedings Paper

Mitsugi, Fumiaki¹  Umeda, Yoshihiro¹  Sakai, Norihiro¹  Ikegami, Tomoaki¹ 

[1] Kumamoto Univ, Grad Sch Sci & Technol, Kumamoto 8608555, Japan

关键词: Transparent conducting oxide;    Amorphous gallium doped zinc oxide;    Pulsed laser deposition;    Room temperature deposition;    Large-area deposition;   

DOI  :  10.1016/j.tsf.2010.03.044

来源: Elsevier

【 摘 要 】

Recently, transparent conducting oxide thin films have attracted attention for the application to transparent conducting electrodes. In this work, we evaluated the uniformity of electrical, optical and structural properties for gallium doped zinc oxide thin films prepared on the 10 x 10 cm(2) silica glass substrate by pulsed laser deposition. The resistivity, carrier concentration, mobility, bonding state and atomic composition of the film were uniform along in-plane and depth direction over the 10 x 10 cm(2) area of the substrate. The film showed the average transmittance of 81-87%, resistivity of 1.4 x 10(-3) Omega cm, carrier concentration of 9.7 x 10(20)/cm(3) and mobility of 5 cm(2)/Vs in spite of the amorphous X-ray diffraction pattern. The gradual thickness distribution was found, however, the potential for large-area and low temperature deposition of transparent conducting oxide thin film using pulsed laser deposition method was confirmed. (c) 2010 Elsevier B.V. All rights reserved.

【 授权许可】

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