Development of thickness measurement program for transparent conducting oxide thin films

THIN SOLID FILMS

卷:518

Article; Proceedings Paper

Mitsugi, Fumiaki¹  Matsuoka, Aya¹  Umeda, Yoshihiro¹  Ikegami, Tomoaki¹ 

[1] Kumamoto Univ, Grad Sch Sci & Technol, Kumamoto 8608555, Japan

关键词: Transparent conducting oxide;    Gallium doped zinc oxide;    Pulsed laser deposition;    Film thickness;    Drude's theory;    Hall effect measurement;   

DOI  :  10.1016/j.tsf.2010.03.047

来源: Elsevier

【 摘 要 】

The gallium doped zinc oxide has been one of the candidates for the transparent conducting oxide thin film electrode. It is not suitable to use a conventional light interference method to measure the thickness of the gallium doped zinc oxide thin film because the refractive index and extinction coefficient of the thin film is unknown during the optimization of the deposition conditions. In this paper, we report on the details of the film thickness program which uses the measured optical and electric properties and relationship between the plasma frequency and the optical constant of the film. The obtained film thickness of the prepared gallium doped zinc oxide thin film using the program was comparable with thicknesses measured by a cross-sectional analysis of the atomic force microscopy and the surface profiler. Moreover, the optical constant of refractive index and extinction coefficient of the film could also be estimated. (c) 2010 Elsevier B.V. All rights reserved.

【 授权许可】

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