Hot wire chemical vapor deposition for silicon photonics: An emerging industrial application opportunity

THIN SOLID FILMS

卷:676

Article

Tarazona, A.¹  Bucio, T. Dominguez¹  Oo, S. Z.^1,2  Petra, R.²  Khokhar, A. Z.²  Boden, Stuart A.²  Gardes, Fy²  Reed, Gt¹  Chong, H. M. H.² 

[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

[2] Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England

关键词: Silicon photonics;    Hot wire chemical vapor deposition;    Silicon nitride;    Mach-Zehnder interformeter;    Multimode interferometer;    Silicon photonics waveguides;   

DOI  :  10.1016/j.tsf.2019.02.048

来源: Elsevier

【 摘 要 】

In this work different silicon photonic devices, including straight waveguides, multi-mode interference devices and Mach-Zehnder interferometers, were fabricated and characterized on hot-wire chemical vapor deposition (HWCVD) silicon nitride (SiN) layers deposited at temperatures below 350 degrees C. These layers presented a hydrogen concentration of 13.1%, which is lower than that achieved with plasma enhanced chemical vapor deposition at these deposition temperatures. The lowest reported optical propagation losses of 6.1 dB/cm and 5.7 dB/cm, 1550 nm and 1310 respectively, for straight SiN waveguides prepared by HWCVD was measured. We demonstrated that silicon nitride SiN, prepared using HWCVD, is a viable material for silicon photonics fabrication.

【 授权许可】

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