High-quality Ge epilayers grown on a Si substrate in one step process via hot wire chemical vapor deposition

17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Denisov, S.A.^1,2 ; Matveev, S.A.^2 ; Chalkov, V Yu^1 ; Shengurov, V.G.^1

Physico-Technical Research Institute, Nizhniy Novgorod State University, Nizhniy Novgorod, 23/3 Gagarin Ave., Nizhny Novgorod

603950, Russia^1

Physics Department, Nizhniy Novgorod State University, Nizhniy Novgorod, 23/3 Gagarin Ave., Nizhny Novgorod

603950, Russia^2

关键词: High quality;    Hot wire chemical vapor deposition;    One-step process;    Optical qualities;    Root Mean Square;    Si substrates;    Thermal-annealing;    Threading dislocation densities;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/690/1/012014/pdf
DOI  :  10.1088/1742-6596/690/1/012014

来源: IOP

【 摘 要 】

High-quality Ge epilayers on Si with a low threading-dislocation density (TDD) were grown by a one step hot wire chemical vapor deposition process at 350°C without cyclic thermal annealing. The Ge layers with threading dislocation density (TDD) of 1-105cm-2for a 1.4 μm thick Ge layer were obtained on Si wafers of a diameter ∅ = 5 cm. Root mean square of roughness (RMS) of ∼ 0.37 nm is achieved. The Ge layers produced are of high optical quality.