Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method

THIN SOLID FILMS

卷:517

Article

Tsay, Chien-Yie¹  Cheng, Hua-Chi²  Tung, Yen-Ting¹  Tuan, Wei-Hsing³  Lin, Chung-Kwei¹ 

[1] Feng Chia Univ, Dept Mat Sci & Engn, Taichung 407, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[3] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 106, Taiwan

关键词: Transparent oxide semiconductors;    ZnO thin films;    Sn doping;    Sol-gel method;   

DOI  :  10.1016/j.tsf.2008.06.030

来源: Elsevier

【 摘 要 】

In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sri doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.%. The as-deposited films were pre-heated at 300 degrees C for 10 min and then annealed in air at 500 degrees C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.% Sn concentration exhibited the best properties, namely an average transmittance of 90%, an RMS roughness value of 1.92 nm and a resistivity of 9.3 x 10(2) Omega-cm. (C) 2008 Elsevier B.V All rights reserved.

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