Atomic and electronic structure of graphene oxide/Cu interface

THIN SOLID FILMS

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Article

Boukhvalov, Danil W.^1,2  Kurmaev, Ernst Z.^2,3  Urbanczyk, Ewelina⁴  Dercz, Grzegorz⁵  Stolarczyk, Agnieszka⁴  Simka, Wojciech⁴  Kukharenko, Andrey I.²  Zhidkov, Ivan S.²  Slesarev, Anatoly I.²  Zatsepin, Anatoly F.²  Cholakh, Seif O.² 

[1] Hanyang Univ, Dept Chem, 17 Haengdang Dong, Seoul 04763, South Korea

[2] Ural Fed Univ, Inst Phys & Technol, Mira Str 19, Ekaterinburg 620002, Russia

[3] Russian Acad Sci, Ural Branch, MN Mikheev Inst Met Phys, 18 Kovalevskoj Str, Ekaterinburg 620990, Russia

[4] Silesian Tech Univ, Fac Chem, B Krzywoustego St 6, PL-44100 Gliwice, Poland

[5] Univ Silesia, Inst Mat Sci, 75 Pulku Piechoty St 1 A, PL-41500 Chorzow, Poland

关键词: Graphene;    Graphene oxide;    Reduced graphene oxide;    Density functional Theory;    X-ray photoelectron spectroscopy;    Conductivity;   

DOI  :  10.1016/j.tsf.2018.09.002

来源: Elsevier

【 摘 要 】

The results of X-ray photoemission (XPS) and valence bands spectroscopy, optically stimulated electron emission (OSEE) measurements and density functional theory based modeling of graphene oxide (GO) placed on Cu via an electrophoretic deposition (EPD) are reported. The comparison of XPS spectra of EPD prepared GO/Cu composites with those of as prepared GO, strongly reduced GO, pure and oxidized copper demonstrate the partial (until C/O ratio about two) removal of oxygen-containing functional groups from GO simultaneously with the formation of copper oxide-like layers over the metallic substrate. OSEE measurements evidence the presence of copper oxide phase in the systems simultaneously with the absence of contributions from GO with corresponding energy gap. All measurements demonstrate the similarity of the results for different thickness of GO cover of the copper surface. Theoretical modeling demonstrates favorability of migration of oxygen-containing functional groups from GO to the copper substrate only for the case of C/O ratio below two and formation of Cu-O-C bonds between substrate and GO simultaneously with the vanishing of the energy gap in GO layer. Basing on results of experimental measurements and theoretical calculations we suggest the model of atomic structure for Cu/GO interface as Cu/CuO/GO with C/O ratio in gapless GO about two.

【 授权许可】

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