Gas Sensors Based on Chemically Reduced Holey Graphene Oxide Thin Films

Nanoscale Research Letters

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[1] 0000 0001 0198 0694, grid.263761.7, School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 215006, Suzhou, People’s Republic of China;0000 0001 0198 0694, grid.263761.7, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, 215006, Suzhou, People’s Republic of China;0000 0004 0368 8293, grid.16821.3c, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, 200240, Shanghai, People’s Republic of China;0000 0004 0369 3615, grid.453246.2, Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging, College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, 210023, Nanjing, People’s Republic of China;

关键词: Graphene oxide;    Reduced graphene oxide;    Holey graphene;    NH gas sensor;   

DOI  :  10.1186/s11671-019-3060-5

来源: publisher

【 摘 要 】

The nanosheet stacking phenomenon in graphene thin films significantly deteriorates their gas-sensing performance. This nanosheet stacking issue should be solved and reduced to enhance the gas detection sensitivity. In this study, we report a novel ammonia (NH3) gas sensor based on holey graphene thin films. The precursors, holey graphene oxide (HGO) nanosheets, were prepared by etching graphene under UV irradiation with Fenton reagent (Fe2+/Fe3+/H2O2). Holey graphene was prepared by the reduction of HGO (rHGO) with pyrrole. Holey graphene thin-film gas sensors were prepared by depositing rHGO suspensions onto the electrodes. The resulting sensing devices show excellent response, sensitivity, and selectivity to NH3. The resistance change is 2.81% when the NH3 level is as low as 1 ppm, whereas the resistance change is 11.32% when the NH3 level is increased to 50 ppm. Furthermore, the rHGO thin-film gas sensor could be quickly restored to their initial states without the stimulation with an IR lamp. In addition, the devices showed excellent repeatability. The resulting rHGO thin-film gas sensor has a great potential for applications in numerous sensing fields because of its low cost, low energy consumption, and outstanding sensing performance.

【 授权许可】

CC BY