Single step deposition method for nearly stoichiometric CuInSe2 thin films

THIN SOLID FILMS

卷:519

Article

Karthikeyan, Sreejith¹  Hill, Arthur E.¹  Pilkington, Richard D.¹  Cowpe, John S.¹  Hisek, Joerg²  Bagnall, Darren M.³ 

[1] Univ Salford, Mat & Phys Res Ctr, Salford MS 4WT, Lancs, England

[2] Tech Univ Carolo Wilhelmina Braunschweig, Hannover, Germany

[3] Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England

关键词: Copper indium diselenide;    Thin films;    Pused DC magnetron sputtering;    Powder target;    X-ray diffraction;    Solar Cells;    Energy dispersive X-ray analysis;   

DOI  :  10.1016/j.tsf.2010.12.158

来源: Elsevier

【 摘 要 】

This paper reports the production of high quality copper indium diselenide thin films using pulsed DC magnetron sputtering from a powder target. As-grown thin films consisted of pin-hole free, densely packed grains. X-ray diffraction showed that films were highly orientated in the (112) and/or (204)/(220) direction with no secondary phases present. The most surprising and exciting outcome of this study was that the as-grown films were of near stoichiometric composition, almost independent of the composition of the starting material. No additional steps or substrate heating were necessary to incorporate selenium and create single phase CuInSe2. Electrical properties obtained by hot point probe and four point probe gave values of low resistivity and showed that the films were all p-type. The physical and structural properties of these films were analyzed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Resistivity measurements were carried out using the four point probe and hot probe methods. The single step deposition process can cut down the cost of the complex multi step processes involved in the traditional vacuum based deposition techniques. (C) 2010 Elsevier B.V. All rights reserved.

【 授权许可】

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