26th Symposium on Plasma Sciences for Materials | |
Characteristics of plasma parameters in sputtering deposition using a powder target | |
物理学;材料科学 | |
Kawasaki, H.^1 ; Taniyama, D.^1 ; Takeichi, S.^1 ; Ohshima, T.^1 ; Yagyu, Y.^1 ; Ihara, T.^1 ; Tanaka, Y.^1 ; Suda, Y.^1 | |
Department of Electrical and Electronic Engineering, Sasebo National College of Technology, 1-1 Okishin, Sasebo, Nagasaki 857-1193, Japan^1 | |
关键词: Axial profiles; Emission intensity; Plasma parameter; Powder target; Processing plasma; Profile shapes; Radial profiles; Sputtering deposition; | |
Others : https://iopscience.iop.org/article/10.1088/1742-6596/518/1/012003/pdf DOI : 10.1088/1742-6596/518/1/012003 |
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学科分类:材料科学(综合) | |
来源: IOP | |
【 摘 要 】
Fabrication mechanisms of functional thin films prepared using a sputtering deposition method with metal-based powder targets were examined and profiles of electron density and emission intensity in the processing plasma were investigated. The electron density and electron temperature were 0.5 × 109to 3 × 109cm-9and 0.5 to 1.5 eV, respectively. The radial profiles of the electron density were almost uniform, but the electron density and temperature at the edge of the electrode were higher than those at the center near the powered electrode. Axial profiles suggested that the electron density was the highest at the plasma/sheath boundary. The profile shape using a powder target was almost the same as that using a bulk target.
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