BaxSr1-xTi1.02O3 metal-insulator-metal capacitors on planarized alumina substrates

THIN SOLID FILMS

卷:518

Article

Tiggelman, M. P. J.¹  Reimann, K.²  Klee, M.³  Mauczock, R.³  Keur, W.³  Hueting, R. J. E.¹ 

[1] Univ Twente, Chair Semicond Components, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[2] Corp I&T Res, NXP Semicond, NL-5656 AE Eindhoven, Netherlands

[3] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

关键词: Aluminium oxide;    Ceramics;    Glass;    Ferroelectric properties;    Electron microscopy;    X-ray diffraction;   

DOI  :  10.1016/j.tsf.2009.09.049

来源: Elsevier

【 摘 要 】

Nanocrystalline barium strontium titanate (BaxSr1-xTi1.02O3) thin films with a barium content of x = 0.8, 0.9 and 1 have been fabricated in a metal-insulator-metal configuration on glass-planarized alumina substrates. Cost-effective processing measures have been utilized by using poly-crystalline alumina substrates, wet-chemical processing of the dielectric, and by a small physical area of the ferroelectric capacitors (as low as 50 mu m(2) for radio frequencies measurements). Glass-planarization on alumina ceramic substrates enables barium strontium titanate films with high quality and homogeneity. We mainly focus on fine-tuning the electrical performance in the low gigahertz range (<10 GHz). Extensive micro-structural and electrical characterization has been performed. Micro-structural information is obtained by: Transmission Electron Microscopy, Scanning Electron Microscopy and X-ray diffraction. The dielectric response is investigated as a function of temperature, frequency and electric field for each sample. We measured a relatively constant permittivity for typical operating temperatures of applications. The quality factor Q is between 21 and 27 at 1 GHz at zero DC bias and the tuning ratio eta between 1.8 and 2.2 at vertical bar E vertical bar = 0.4 MV/cm. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

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