Mechanism of charge transport in Si/Al2O3/Al structures

15th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Borisova, T.M.^1 ; Castro, R.A.^1

Russian State Pedagogical University Named after A.I. Hertsen, 48, Moyka river Emb., Saint-Petersburg, 191186, Russia^1

关键词: Aluminium oxide;    Possible mechanisms;    Space charge limited currents;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/461/1/012017/pdf
DOI  :  10.1088/1742-6596/461/1/012017

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

The investigation of current-voltage characteristics of structures Si/Al2O3/Al on the basis of aluminium oxide layers obtained by a method atomic layer deposition is carried out. It is established, that the possible mechanism of charge transport in structure is the space charge limited currents. The charge carrier concentration (Nt), concentration of traps (n0) and electron mobility (μ) in Al2O3layer are calculated.