Optoelectronic studies in nanocrystalline silicon Schottky diodes obtained by hot-wire CVD

THIN SOLID FILMS

卷:383

Article; Proceedings Paper

Voz, C ; Soler, D ; Fonrodona, M ; Bertomeu, J ; Asensi, JM ; Andreau, J

关键词: nanocrystalline silicon;    hot-wire CVD;    electronic transport;    solar cell;   

DOI  :  10.1016/S0040-6090(00)01574-1

来源: Elsevier

【 摘 要 】

The very usual columnar growth of nanocrystalline silicon leads to electronic transport anisotropies. Whereas electrical measurements with coplanar electrodes only provide information about the electronic transport parallel to the substrate, it is the transverse transport which determines the collection efficiency in thin film solar cells. Hence, Schottky diodes on transparent electrodes were obtained by hot-wire CVD in order to perform external quantum efficiency and surface photovoltage studies in sandwich configuration. These measurements allowed to calculate a transverse collection length, which must correlate with the photovoltaic performance of thin film solar cells. Furthermore, the density of charge trapped at localised states in the bandgap was estimated from the voltage dependence of the depletion capacitance of these rectifying contacts. (C) 2001 Elsevier Science B.V. All rights reserved.

【 授权许可】

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