Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate

THIN SOLID FILMS

卷:501

Article; Proceedings Paper

Fonrodona, M ; Soler, D ; Escarré, J ; Villar, F ; Bertomeu, J ; Andreu, J ; Saboundji, A ; Coulon, N ; Mohammed-Brahim, I

关键词: thin film transistor;    amorphous and nanocrystalline silicon;    hot-wire CVD;   

DOI  :  10.1016/j.tsf.2005.07.217

来源: Elsevier

【 摘 要 】

Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor Deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited oil glass substrates covered with SiO2. Amorphous silicon devices exhibited mobility values of 1.3 cm(2) V-1 s(-1),which are very high taking into account the amorphous nature of the material. Nanocrystalline transistors presented mobility values as high as 11.5 cm(2) V-1 s(-1) and resulted in low threshold voltage shift (similar to 0.5 V). (c) 2005 Elsevier B.V. All rights reserved.

【 授权许可】

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