Anomalous phase formation during annealing of La2O3 thin films deposited by ion beam assisted electron beam evaporation

THIN SOLID FILMS

卷:517

Article

Yang, Chen¹  Fan, Huiqing¹  Xi, Yingxue¹  Qiu, Shaojun²  Fu, Yunfei¹ 

[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

[2] Xian Modern Chem Res Inst, Xian 710065, Peoples R China

关键词: La2O3 thin films;    Electron beam evaporation;    Film structure;    Heterogeneous nucleation;    Optical properties;    Electrical properties;   

DOI  :  10.1016/j.tsf.2008.09.069

来源: Elsevier

【 摘 要 】

The fifty seven turn thick La2O3 thin films were deposited on Si (100) substrates. After deposition, the amorphones thin films, were amorphous, were annealed at 750 and 900 degrees C for 1 h. It was found that their amorphous structure had been crystallized to hexagonal and cubic structures, respectively. The phase formation of the La2O3 thin films was anomalous at higher annealing temperatures. The theory of heterogeneous nucleation was used to interpret the anomalous phase formation of La2O3 films. To investigate the effects of the phase structure on these properties, Refractive indexes and dielectric constants of different structures of La2O3 films were measured. (C) 2008 Elsevier B.V. All rights reserved.

【 授权许可】

Free