Unexpected band-bending of donor-doped PbZr0.52Ti0.48O3 films

THIN SOLID FILMS

卷:715

Article

Barrett, Nicholas¹  Gueye, Ibrahima^3,4  Le Rhun, Gwenael²  Renault, Olivier²  Defay, Emmanuel⁵ 

[1] Univ Paris Saclay, CNRS, CEA, SPEC, F-91191 Gif Sur Yvette, France

[2] Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France

[3] Natl Inst Mat Sci NIMS, Res Ctr Adv Measurement & Characterizat, Synchrotron Xray Grp, 1-1-1 Kouto, Sayo, Hyogo 6795148, Japan

[4] Synchrotron Xray Stn SPring8, Res Network & Facil Serv Div, NIMS, 1-1-1 Kouto, Sayo, Hyogo, Japan

[5] Luxembourg Inst Sci & Technol, Mat Res & Technol Dept, 41 Rue Brill, L-4422 Luxembourg, Luxembourg

关键词: Lead zirconate titanate;    X-ray photoelectron spectroscopy;    Doping;    Band bending;   

DOI  :  10.1016/j.tsf.2020.138423

来源: Elsevier

【 摘 要 】

We present a study of the correlation between doping induced band shifts in ferroelectric PbZr0.52Ti0.48O3 (PZT) and the electrical characteristics of PZT-based capacitors. Sol-gel grown 220 nm PZT thin films were doped with 1 to 4% La or Nb donors at A and B-sites, respectively. The peak surface capacitance and breakdown field values are obtained for 2% La and Nb. The breakdown field decreases significantly for higher doping suggesting the formation of new conduction paths. Film chemistry is unchanged by La or Nb doping but band shifts are observed. La and Nb doping results in band bending towards the Fermi level, with a maximum shift also at 2% and La doping softens the ferroelectric state as seen from the reduction in the coercive field. The results are consistent with initial compensation of oxygen vacancies by La and Nb doping following thermal activation of defects.

【 授权许可】

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