Preparation and properties of p-type transparent conductive Cu-doped NiO films

THIN SOLID FILMS

卷:519

Article

Chen, S. C.^1,2  Kuo, T. Y.³  Lin, Y. C.¹  Lin, H. C.^2,3 

[1] Ming Chi Univ Technol, Dept Mat Engn, Taipei 243, Taiwan

[2] Ming Chi Univ Technol, Ctr Thin Film Technol & Applicat, Taipei 243, Taiwan

[3] Natl Taiwan Univ, Inst Mat Sci & Engn, Taipei 106, Taiwan

关键词: Cu-doped NiO films;    rf sputtering;    Electrical and optical properties;   

DOI  :  10.1016/j.tsf.2011.01.058

来源: Elsevier

【 摘 要 】

The NiO-Cu composite films with various Cu contents of 0-18.17 at.% are deposited on a glass substrate. An ultra high electrical resistivity (rho) is obtained and cannot be detected by a four point probe measurement when the Cu content in the films is lower than 6.97 at.%. The p value is reduced significantly to 35.8 Omega-cm as Cu content is increased to 9.18 at.%, and it further decreases to 0.02 Omega-cm when the Cu content further increases to 18.17 at.%. The Hall measurement for all Cu-doped NiO films shows p-type conduction. In addition, the transmittance of NiO films also decreases continuously from 96% to 43% as Cu content increases from 0 to 18.17 at.%. The XRD patterns of Cu-doped NiO films show that only NiO peaks appear and the crystallinity of NiO films degrades as Cu content exceeds 6.97 at.%. A large amount of lattice sites of Ni(2+) ions in a NiO crystallite is replaced by the Cu(+) ions that lead to p-type conduction and result in the degradation of crystallinity for NiO-Cu composite films that have a higher Cu content. (C) 2011 Elsevier B.V. All rights reserved.

【 授权许可】

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