Physical models for MoS2 and their application to simulations of MoS2 MSM device

2017 2nd International Conference on Innovative Engineering Materials

Zhang, Shan^1 ; Pu, Hongbin^1 ; Yang, Yong^1

Department of Electronic Engineering, Xi'An University of Technology, Xian

710082, China^1

关键词: Electrical and optical properties;    Electronic device;    I;    V curve;    Low temperatures;    Mobility model;    MSM devices;    Physical model;    Two-dimensional semiconductors;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/284/1/012007/pdf
DOI  :  10.1088/1757-899X/284/1/012007

来源: IOP

【 摘 要 】

MoS2is a kind of two-dimensional semiconductor material with excellent electrical and optical properties, which can be used to develop new types of electronic devices and optoelectronic devices. Here, we established the mobility model of the MoS2. It is found that the simulation results agree with the experimental data. And our model are better than the theoretical results at low temperature. At the same time, we used the model to simulat the MoS2MSM device. The I - V curve are basically identical with the measurement results, which proves the practicability of the model.