Experimental model of multi-junction solar cell: IV curve tailoring and photoresponce artifact simulation

16th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Kozhukhovskaia, S.A.^1,2 ; Filimonov, E.D.^1,2 ; Shvarts, M.Z.^1

Ioffe Physical-Technical Institute, St. Petersburg, 194021, Russia^1

BSTU, St.-Petersburg

190005, Russia^2

关键词: Construction process;    Experimental modeling;    External quantum efficiency;    I;    V curve;    IV characteristics;    P-n junction;    Spectral dependency;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/586/1/012014/pdf
DOI  :  10.1088/1742-6596/586/1/012014

来源: IOP

【 摘 要 】

This paper presents an experimental model (maquette) of a multijunction solar cell, which allows one to study the IV characteristic construction process, the influence of individual p-n junctions on the resulting IV characteristic and the causes of artifacts in measuring the spectral dependencies of external quantum efficiency.