期刊论文详细信息
THIN SOLID FILMS 卷:519
A low-temperature-cross-linked poly(4-vinylphenol) gate-dielectric for organic thin film transistors
Article
Vicca, Peter1  Steudel, Soeren1  Smout, Steve1  Raats, Arne2  Genoe, Jan1  Heremans, Paul1,3 
[1] IMEC, Polymer & Mol Elect Grp, B-3001 Louvain, Belgium
[2] Katholieke Hsch Leuven Gezondheid & Technol, B-3000 Louvain, Belgium
[3] Katholieke Univ Leuven, Dept ESAT, B-3001 Louvain, Belgium
关键词: Microelectronics;    Processing;    Cross linking;    Poly(4-vinylphenol);    Dielectric properties;   
DOI  :  10.1016/j.tsf.2010.08.009
来源: Elsevier
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【 摘 要 】

We present experimental results using an alternative cross-linker for poly(4-vinylphenol) (PVP) that allows lowering of the thermal budget of the cross-linking reaction to 130 degrees C which compares very favorable to the 180 degrees C required by the commonly used cross-linking agent poly(melamine-co-formaldehyde). Furthermore. we characterize the dielectric properties of a 200 nm thick layer and realize high quality organic thin film transistors using this low-temperature PVP as a gate-dielectric. (C) 2010 Elsevier B.V. All rights reserved.

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