期刊论文详细信息
THIN SOLID FILMS | 卷:519 |
A low-temperature-cross-linked poly(4-vinylphenol) gate-dielectric for organic thin film transistors | |
Article | |
Vicca, Peter1  Steudel, Soeren1  Smout, Steve1  Raats, Arne2  Genoe, Jan1  Heremans, Paul1,3  | |
[1] IMEC, Polymer & Mol Elect Grp, B-3001 Louvain, Belgium | |
[2] Katholieke Hsch Leuven Gezondheid & Technol, B-3000 Louvain, Belgium | |
[3] Katholieke Univ Leuven, Dept ESAT, B-3001 Louvain, Belgium | |
关键词: Microelectronics; Processing; Cross linking; Poly(4-vinylphenol); Dielectric properties; | |
DOI : 10.1016/j.tsf.2010.08.009 | |
来源: Elsevier | |
【 摘 要 】
We present experimental results using an alternative cross-linker for poly(4-vinylphenol) (PVP) that allows lowering of the thermal budget of the cross-linking reaction to 130 degrees C which compares very favorable to the 180 degrees C required by the commonly used cross-linking agent poly(melamine-co-formaldehyde). Furthermore. we characterize the dielectric properties of a 200 nm thick layer and realize high quality organic thin film transistors using this low-temperature PVP as a gate-dielectric. (C) 2010 Elsevier B.V. All rights reserved.
【 授权许可】
Free
【 预 览 】
Files | Size | Format | View |
---|---|---|---|
10_1016_j_tsf_2010_08_009.pdf | 836KB | download |