Characterization of SF6/Argon Plasmas for Microelectronics Applications

HEBNER, GREGORY A. ; ABRAHAM, ION C. ; WOODWORTH, JOSEPH R.

Sandia National Laboratories

关键词: Materials Working;    Plasma Diagnostics;    Energy Spectra;    Microelectronics;    Sulfur Fluorides;   

DOI  :  10.2172/793326
RP-ID  :  SAND2002-0340
RP-ID  :  AC04-94AL85000
RP-ID  :  793326

美国|英语

来源: UNT Digital Library

【 摘 要 】

This report documents measurements in inductively driven plasmas containing SF{sub 6}/Argon gas mixtures. The data in this report is presented in a series of appendices with a minimum of interpretation. During the course of this work we investigated: the electron and negative ion density using microwave interferometry and laser photodetachment; the optical emission; plasma species using mass spectrometry, and the ion energy distributions at the surface of the rf biased electrode in several configurations. The goal of this work was to assemble a consistent set of data to understand the important chemical mechanisms in SF{sub 6} based processing of materials and to validate models of the gas and surface processes.