X-ray photoelectron spectroscopy studies of Ti1-xAlxN (0 ≤ x ≤ 0.83) high-temperature oxidation: The crucial role of Al concentration

SURFACE & COATINGS TECHNOLOGY

卷:374

Article

Greczynski, G.¹  Hultman, L.¹  Oden, M.² 

[1] Linkoping Univ, Dept Phys IFM, Thin Film Phys, SE-58183 Linkoping, Sweden

[2] Linkoping Univ, Dept Phys IFM, Nanostruct Mat, SE-58183 Linkoping, Sweden

关键词: TiAIN;    HIPIMS;    Oxidation;    XPS;    HPPMS;    Magnetron sputtering;   

DOI  :  10.1016/j.surfcoat.2019.06.081

来源: Elsevier

【 摘 要 】

The resistance to high-temperature oxidation of Ti1-xAlxN films determines performance in numerous applications including coated cutting tools. Here, we present a comprehensive study covering Ti1-xAlxN films with 0 <= x <= 0.83 annealed in air for 1 h at temperatures T-a ranging from 500 to 800 degrees C. Layers are grown by the combination of high-power impulse and dc magnetron sputtering (HiPIMS/DCMS) in Ar/N-2 atmospheres. We use X-ray photoelectron spectroscopy to study the evolution of surface chemistry and to reconstruct elemental distribution profiles. No dependence of oxidation process on the phase content, average grain size, or preferred orientation could be confirmed, to the accuracy offered by the employed X-ray diffraction techniques. Instead, our results show that, under the applied test conditions, the Ti1-xAlxN oxidation scenario depends on both x and T-a. The common notion of double-layer Al2O3/TiO2 oxide formation is valid only in a limited region of the x-T-a parameter space (Type-1 oxidation). Outside this range, a mixed and non-conformal Al2O3-TiO2 layer forms, characterized by larger oxide thickness (Type-2 oxidation). The clear distinction between different Ti1-xAlxN oxidation scenarios revealed here is essential for numerous applications that can benefit from optimizing the Al content, while targeting a given operational temperature range.

【 授权许可】

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