Nanoscale friction of partially oxidized silicon nitride thin films

SURFACE & COATINGS TECHNOLOGY

卷:205

Article

Filla, J.¹  Aguzzoli, C.^1,2  Sonda, V.¹  Farias, M. C. M.¹  Soares, G. V.²  Baumvol, I. J. R.^1,2  Figueroa, C. A.¹ 

[1] Univ Caxias Sul, Ctr Ciencias Exatas & Tecnol, BR-95070560 Caxias Do Sul, Brazil

[2] Univ Fed Rio Grande do Sul, Inst Fis, BR-91509970 Porto Alegre, RS, Brazil

关键词: Silicon nitride;    Silicon oxide;    Nanoscale friction;    Ionic potential;   

DOI  :  10.1016/j.surfcoat.2011.03.111

来源: Elsevier

【 摘 要 】

The nanoscale friction of partially oxidized silicon nitride thin films deposited by reactive magnetron sputtering was investigated. Post deposition thermal annealing in O-2, trying to simulate the oxidation by atmospheric oxygen in working conditions, formed a partially oxidized layer at the surface with maximum thickness around 10 nm. Unidirectional sliding tests showed a decrease of the low-load friction coefficients of the sliding pair for the samples annealed in oxygen as compared to the non-annealed ones. The results are discussed on the lights of our extension of the crystal chemistry model, which establishes a relationship between ionic potential and friction coefficient. (C) 2011 Elsevier B.V. All rights reserved.

【 授权许可】

Free