Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure

SURFACE & COATINGS TECHNOLOGY

卷:295

Article; Proceedings Paper

Schaefer, J.¹  Hnilica, J.²  Sperka, J.^2,3  Quade, A.¹  Kudrle, V.²  Foest, R.¹  Vodak, J.⁴  Zajickova, L.^2,3 

[1] Leibniz Inst Plasma Sci & Technol EV, Felix Hausdorff Str 2, D-17489 Greifswald, Germany

[2] Masaryk Univ, Dept Phys Elect, Kotlarska 2, CZ-61137 Brno, Czech Republic

[3] Masaryk Univ, CEITEC Cent European Inst Technol, Kamenice 753-5, CZ-62500 Brno, Czech Republic

[4] Brno Univ Technol, Fac Mech Engn, Inst Engn Phys, Tech 2896 2, CZ-61669 Brno, Czech Republic

关键词: Tetrakis(trimethylsilyloxy)silane;    Tetrakis(trimethylsiloxy)silane;    Plasma jet;    Silicon dioxide;   

DOI  :  10.1016/j.surfcoat.2015.09.047

来源: Elsevier

【 摘 要 】

Plasma enhanced chemical vapor deposition (PECVD) from tetrakis(trimethylsilyloxy)silane (TTMS) has been studied at atmospheric pressure. TTMS has been chosen because of its unique 3D structure with potential to form nano-structured organosilicon polymers. Despite the widespread surveying of various silicon-organic molecules for PECVD, the use of TTMS in AP-PECVD has not been investigated deeper yet. PECVDs have been performed with two different plasma jets. While they are alike regarding the geometry and injection of TTMS, they differ in input power and excitation frequency. The radiofrequency plasma jet operates at lower power densities as compared to the microwave plasma jet. Despite this all the deposited films exhibit similar chemical properties resembling that of silicon dioxide (Si:O = 1:2) with carbon content below 5%. The films demonstrate a broad variety of morphologies from compact smooth films to nano-dendritic 3D structures depending on the particular process. (C) 2015 Elsevier B.V. All rights reserved.

【 授权许可】

Free