Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure

THIN SOLID FILMS

卷:630

Article

Schaefer, Jan¹  Fricke, Katja¹  Mika, Filip²  Pokorna, Zuzana²  Zajickova, Lenka^3,4  Foest, Ruediger¹ 

[1] Leibniz Inst Plasma Sci & Technol eV, Felix Hausdorff Str 2, D-17489 Greifswald, Germany

[2] CAS, Inst Sci Instruments, Vvi, Kralovopolska 147, Brno 61264, Czech Republic

[3] Masaryk Univ, CEITEC Cent European Inst Technol, Kamenice 753-5, Brno 62500, Czech Republic

[4] Masaryk Univ, Fac Sci, Dept Phys Elect, Kotlarska 2, CS-61137 Brno, Czech Republic

关键词: Plasma jet;    Liquid assisted plasma enhanced chemical vapour deposition;    Silicon oxide;    Hexamethyldisiloxane;    Octamethyltetrasiloxane;    Tetrakis(trimethylsilyloxy)silane;   

DOI  :  10.1016/j.tsf.2016.09.022

来源: Elsevier

【 摘 要 】

The present study introduces a process for the synthesis of functional films onto substrates directly from the liquid phase. The reported method is based on the initialization of the synthesis by means of an atmospheric pressure plasma jet operating with argon above a thin liquid film of the starting material. The process is demonstrated by the formation of a thin, solid SiOx film from siloxane-based liquid precursors. Changes in the chemical properties of the precursor were studied in-situ during the polymerization process on the diamond crystal by using Fourier transform infrared spectroscopy The elemental composition of the SiOxCy films was analyzed by X-ray photoelectron spectroscopy (XPS). Furthermore, XPS was applied to study the effect of post-annealing processes on the composition of the films. The obtained deposits exhibit a low concentration of carbon groups. The amount of hydroxyl groups and interstitial water can be reduced significantly by post-process annealing of the films. (C) 2016 The Author(s). Published by Elsevier B.V.

【 授权许可】

Free