Assessing boron quantification and depth profiling of different boride materials using ion beams

SURFACE & COATINGS TECHNOLOGY

卷:417

Article

Pitthan, E.¹  Moro, M., V¹  Correa, S. A.^1,2  Primetzhofer, D.¹ 

[1] Uppsala Univ, Dept Phys & Astron, Angstrom Lab, Box 516, SE-75120 Uppsala, Sweden

[2] Univ Fed Rio Grande do Sul, Inst Quim, BR-91509900 Porto Alegre, RS, Brazil

关键词: Boron profiling;    Boron implantation;    Nuclear reaction analysis;    Elastic backscattering spectrometry;    Time-of-flight elastic recoil detection analysis;   

DOI  :  10.1016/j.surfcoat.2021.127188

来源: Elsevier

【 摘 要 】

We assessed the capability to quantify and depth profile boron in different materials by a number of ion beam-based techniques. Specifically, the depth resolution, probing depth, film homogeneity, and detection limit for boron using particle-particle nuclear reaction analysis (resonant and non-resonant mode), elastic backscattering spectrometry, and time-of-flight elastic recoil detection analysis using heavy primary ions were evaluated. Samples consisted of high and low-Z materials implanted by B-11(+) at different energies and fluences, Au/BN structures as well as bulk boride targets. Advantages and limitations for the individual techniques for the different sample types are discussed. As an example, while ToF-ERDA allows to efficiently depth profile B-10 and B-11 individually, limitations in probing depth and depth resolution, as well as quantification are apparent in particular for target materials containing high-Z species. While EBS presents large probing depth (similar to 14 mu m), the best detection limit (similar to 0.1 x 10(15)/cm(2)) is obtained from resonant-NRA.

【 授权许可】

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