ECV investigation of ion-implanted photosensitive silicon structures for backside illuminated CCDs

18th International Conference PhysicA.SPb

Yakovlev, G.^1 ; Frolov, D.^1 ; Zubkova, A.^1 ; Zubkov, V.^1

Department of Micro- and Nanoelectronics, St. Petersburg State Electrotechnical University, LETT, Prof. Popov str. 5, St.-Petersburg

197376, Russia^1

关键词: Backside illuminated ccds;    Boron implantation;    Concentration profiles;    Electric field intensities;    Electrochemical capacitance-voltage profiling;    Fredholm equation;    Free charge carriers;    Silicon structures;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/769/1/012058/pdf
DOI  :  10.1088/1742-6596/769/1/012058

来源: IOP

【 摘 要 】

Boron implanted Si structures used in back-side illuminated and electron bombarded charge coupled devices (CCD) were investigated by means of electrochemical capacitance- voltage (ECV) profiling. A set of test structures were specially fabricated using various energies and doses of boron implantation, as well as different materials were used as their coating layers: Al and silicon oxide. The concentration profiles of free charge carriers across the sample were experimentally obtained. Further, using Poisson equation and Fredholm equation of the first kind the distribution of free charge carrier concentration and electric field intensity in depth of the samples were calculated. By analyzing and comparison of simulated and experimentally obtained concentration profiles, the recommendations for optimization of sample parameters were proposed aiming at increase of sweeping field and decrease of surface potential impact on charge carrier transport.