The effect of argon plasma treatment on the permeation barrier properties of silicon nitride layers

SURFACE & COATINGS TECHNOLOGY

卷:235

Article

Majee, S.¹  Cerqueira, M. F.²  Tondelier, D.¹  Geffroy, B.^1,3  Bonnassieux, Y.¹  Alpuim, P.^2,4  Bouree, J. E.¹ 

[1] Ecole Polytech, Lab Phys Interfaces & Couches Minces, CNRS UMR 7647, F-91128 Palaiseau, France

[2] Univ Minho, Ctr Fis, P-4710057 Braga, Portugal

[3] IRAMIS SPCSI CEA Saclay, Lab Chim Surfaces & Interfaces, F-91191 Gif Sur Yvette, France

[4] INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal

关键词: Silicon nitride;    Ar plasma treatment;    Permeation barrier;    HW-CVD;   

DOI  :  10.1016/j.surfcoat.2013.07.067

来源: Elsevier

【 摘 要 】

In this work we produce and study silicon nitride (SiNx) thin films deposited by Hot Wire Chemical Vapor Deposition (HW-CVD) to be used as encapsulation barriers for flexible organic photovoltaic cells fabricated on polyethylene terephthalate (PET) substrates in order to increase their shelf lifetime. We report on the results of SiNx double-layers and on the equivalent double-layer stack where an Ar-plasma surface treatment was performed on the first SiNx layer. The Ar-plasma treatment may under certain conditions influences the structure of the interface between the two subsequent layers and thus the barrier properties of the whole system. We focus our attention on the effect of plasma treatment time on the final barrier properties. We assess the encapsulation barrier properties of these layers, using the calcium degradation test where changes in the electrical conductance of encapsulated Ca sensors are monitored with time. The water vapor transmission rate (WVTR) is found to be similar to 3 x 10(-3) g/m(2). day for stacked SiNx double-layer with 8 min Ar plasma surface treatment. (C) 2013 Elsevier B.V. All rights reserved.

【 授权许可】

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