A 2-D-Material FET Verilog-A Model for Analog Neuromorphic Circuit Design

Article; Early Access

关键词: FIELD-EFFECT TRANSISTOR;   

DOI  :  10.1109/TED.2023.3298876

来源: SCIE

【 摘 要 】

We present a charge-based Verilog-A model for 2-D-material (2DM)-based field-effect transistors (FETs) with application in neuromorphic circuit design. The model combines the explicit solution of the drift-diffusion transport and electrostatics, including Fermi-Dirac statistics. The Ward-Dutton linear charge partitioning scheme is then employed for terminal charges and capacitance calculations. The model accurately predicts the electrical behavior of experimental MoS2 FETs, and it is applied to simulate neuromorphic-circuit building blocks, including a floating-gate (FG) current-mirror (CM) vector-matrix multi-plier (VMM), extracting the effective number of bits under different operation conditions.

【 授权许可】

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