Weak localization and mobility in ZnO nanostructures

Article

关键词: FIELD-EFFECT TRANSISTOR;    MOLECULAR-BEAM EPITAXY;    THIN-FILMS;    NEGATIVE MAGNETORESISTANCE;    ELECTRICAL-PROPERTIES;    VAPOR-DEPOSITION;    NANOWIRES;    GROWTH;    SEMICONDUCTORS;    HETEROSTRUCTURE;   

DOI  :  10.1103/PhysRevB.80.245318

来源: SCIE

【 摘 要 】

We conduct a comprehensive investigation into the electronic and magnetotransport properties of ZnO nanoplates grown concurrently with ZnO nanowires by the vapor-liquid-solid method. We present magnetoresistance data showing weak localization in our nanoplates and probe its dependence on temperature and carrier concentration. We measure phase coherence lengths of 50-100 nm at 1.9 K and, because we do not observe spin-orbit scattering through antilocalization, suggest that ZnO nanostructures may be promising for further spintronic study. We then proceed to study the effect of weak localization on electron mobility using four-terminal van der Pauw resistivity and Hall measurements versus temperature and carrier concentration. We report an electron mobility of similar to 100 cm(2)/V s at 275 K, comparable to what is observed in ZnO thin films. We compare Hall mobility to field-effect mobility, which is more commonly reported in studies on ZnO nanowires and find that field-effect mobility tends to overestimate Hall mobility by a factor of 2 in our devices. Finally, we comment on temperature-dependent hysteresis observed during transconductance measurements and its relationship to mobile, positively charged Zn interstitial impurities.

【 授权许可】

Free