Preparation, structure, and electronic properties of Fe3O4 films on the Fe(110)/Mo(110)/Al2O3(11(2)over-bar0) substrate

Article

关键词: MOLECULAR-BEAM EPITAXY;    FERROMAGNETIC TUNNEL-JUNCTIONS;    SURFACE-STRUCTURE;    THIN-FILMS;    GROWTH;    MAGNETORESISTANCE;    FE(110);    SPECTROSCOPY;    TEMPERATURE;    DIFFRACTION;   

DOI  :  10.1103/PhysRevB.68.045414

来源: SCIE

【 摘 要 】

The surface and interface structure as well as the electronic properties of thin epitaxial Fe3O4(111) films prepared by in situ oxidation of thin Fe(110) films grown on Al2O3(11(2) over bar 0) substrates using a Mo(110)buffer layer were investigated by low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), transmission electron microscopy (TEM), and spin-polarized angle-resolved photoemission spectroscopy (SPARPES). The annealing of Fe(110) films at 700degreesC in an O-2 atmosphere leads to the formation of epitaxial Fe3O4(111) films. Atomically resolved STM images of the Fe3O4(111) surface show a hexagonal symmetry with 6 Angstrom periodicity. Well-controlled interface properties at the Fe3O4(111)/Fe(110) and Fe(110)/Mo(110) interfaces were confirmed by TEM. A high spin polarization value of about -(60+/-5)% was found near the Fermi energy E-F at room temperature by means of SPARPES with a photon energy of h v = 21.2 eV. The electronic structure and spin polarization are compared to the corresponding values recently found on epitaxial Fe3O4(111) films grown on W(110) single-crystal substrates.

【 授权许可】

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