Local structural ordering in low-temperature-grown epitaxial Fe3+xSi1-x films on Ge(111)

Article

关键词: FE3SI/GAAS(001) HYBRID STRUCTURES;    MOLECULAR-BEAM EPITAXY;    MAGNETIC-PROPERTIES;    ROOM-TEMPERATURE;    THIN-FILMS;    ALLOYS;    FE3SI;    SI;    INTERFACE;    HYPERFINE;   

DOI  :  10.1103/PhysRevB.83.144411

来源: SCIE

【 摘 要 】

For exploring group-IV semiconductor spintronics with ferromagnetic Heusler compounds, we study the local structural ordering of the stoichiometric Fe3Si and off-stoichiometric Fe3.2Si0.8 films epitaxially grown on Ge(111) at a very low temperature of 130 degrees C. Analyzing their Fe-57 Mossbauer spectra, we can discuss the site occupation of Fe atoms in the films grown directly on a semiconductor substrate, where the influence of the interfacial reactions between Fe3Si or Fe3.2Si0.8 and Ge on the Mossbauer spectra is minimized. As a result, we can quantitatively obtain the local degree of the D0(3) ordering (similar to 67%) for the as-grown stoichiometric films, whereas we can not see the structural ordering for the as-grown off-stoichiometric films. Comparing the analytic data between as-grown and annealed films, we find that the postannealing can act effectively on the improvement of the structural ordering only for the off-stoichiometric films.

【 授权许可】

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