Synthetization and Characterization of Mg-doped SnSe with Mg Substitution at the Sn Site by High Energy Ball Milling Technique

Indian Journal of Pure & Applied Physics

article

Mukesh Kumar Bairwa¹  R Gowrishankar²  Anjali Saini¹  S Neeleshwar¹ 

[1] University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University;Department of Physics, Sri Sathya Sai Institute of Higher Learning

关键词: Phase purification;    Ball milling;    SnSe;    Doping;    Article;   

DOI  :  10.56042/ijpap.v61i9.3494

来源: National Institute of Science Communication and Information Resources

【 摘 要 】

Tin selenide (SnSe) is a semiconductor with an orthorhombic crystal structure having an indirect and direct band gap of 0.9 eV and 1.3 eV respectively. The SnSe and Mg-doped SnSe was synthesized by high energy ball milling technique at 300 RPM for 22 hrs. The formation of pure orthorhombic phases of SnSe and Mg-doped SnSe were confirmed by X-ray diffraction (XRD). From the XRD pattern, the crystalline size was estimated which lies below ~10 nm. The morphology of particle size distribution was carried out by scanning electron microscopy (SEM).

【 授权许可】

Unknown