FEATURES OF GROWING Si- AND Si 1- x Ge x -SINGLE-CRYSTAL FILMS FROM SOLUTION-MELT BASED ON TIN

Journal of physical studies

article

A. Sh. Razzokov¹  A. S. Saidov²  V. V. Girzhon³  O. V. Smolyakov³ 

[1] Urgench State University;Physical-Technical Institute NPO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan;Zaporizhzhia National University

关键词: epitaxy;    solution-melt;    substrate;    Rayleigh–Taylor instability;    Brownian motion;    diffusion.;   

DOI  :  10.30970/jps.26.4601

学科分类：物理（综合）

来源: Vydavnychyi Tsentr L vivs koho Natsional noho Universytetu imeni Ivana Franka

【 摘 要 】

The features of variband single-crystal structures based on Si$_{1-x}$Ge$_{x}$ $(0

【 授权许可】

CC BY