Surface Characterization of Zinc Selenide Thin Films Obtained by RF co-sputtering

Journal of the Korean Chemical Society

article

Seokhee Lee¹  Jisoo Kang²  Juyun Park¹  Yong-Cheol Kang¹ 

[1] Department of Chemistry, Pukyong National University;Department of Chemistry, Brown University;Wellman Center for Photomedicine, Massachusetts General Hospital

关键词: Zinc Selenide;    Thin films;    RF co-sputtering;    XPS;   

DOI  :  10.5012/jkcs.2022.66.5.341

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

In this work, radio frequency magnetron sputtering was used to deposit zinc selenide thin films on p-type silicon(100) wafers and glass substrates in a high vacuum chamber. Several surface characterization instruments were implementedto study the thin films. X-ray photoelectron spectroscopy results revealed that oxidized Zn bound to Se (Zn-Se) at 1022.7 ± 0.1 eVbecomes the dominant oxidized species when Se concentration exceeds 70%. Scanning electron microscopy coupled withenergy dispersive spectroscopy showed that incorporating Se in Zn thin films will lead to formation of ZnSe grains on the surface. Contact angle measurements indicated that ZnSe-60 exhibited the lowest total surface free energy value of 24.94 mN/m.Lastly, ultraviolet-visible spectrophotometry and ultraviolet photoelectron spectroscopy data evinced that the energy band gapgradually increases with increasing Se concentration with ZnSe-70 having the highest work function value of 4.91 eV.

【 授权许可】

Unknown