Effect of ZnO doping on the structural and optical properties of BaWO 4 thin films prepared using pulsed laser ablation technique

Pramana

V Ganesan²  N Venugopalan Pillai³  Peter Koshy¹  R Vinodkumar³  V P Mahadevan Pillai1³ 

[1] Electron Microscopy Division, National Institute for Inter Disciplinary Sciences and Technology, Thiruvananthapuram 695 019, India$$;Inter University Consortium for DAE Facilities, Khandwa Road, Indore 452 017, India$$;Department of Optoelectronics, University of Kerala, Kariavattom 695 581, Thiruvananthapuram, India$$

关键词: Thin films;    X-ray diffraction;    optical properties;    pulsed laser ablation;    nano-structured barium tungstate film.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

BaWO4 doped with ZnO (2, 3, 5, 7 and 10 wt%) nanostructured films are prepared on quartz substrates by pulsed laser ablation. The films are post annealed at 900°C. GIXRD analysis of the post-annealed films reveal the change of orientation of scheelite tetragonal crystal growth from 1 1 2 reflection plane to 0 0 4 planes when doping concentration is more than 3 wt%. The AFM images show that film with 7 wt% ZnO doping concentration has good ceramic pattern with surface features giving a minimum value of rms surface roughness suitable for optoelectronic device applications. The optical transmittance and band-gap energy of the films are found to decrease considerably on post-annealing which can be due to the increase in grain size of the crystallites on annealing. Thus doping with ZnO improves the surface features of the films and increases the optical band-gap energy.

【 授权许可】

Unknown