The Properties of RF Sputtered Zirconium Oxide Thin Films at Different Plasma Gas Ratio

Bulletin of the Korean chemical society

Yong Cheol Kang¹  Juyun Park¹  Jin Kook Heo¹ 

关键词: RF sputtering;    Zirconium oxide;    Thin films;    XPS;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

Zirconium oxide thin films deposited on the p-type Si(100) substrates by radio-frequency (RF) reactive magnetron sputtering with different plasma gas ratios have been studied by using spectroscopic ellipsometry (SE), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The deposition of the films was monitored by the oxygen gas ratio which has been increased from 0 to 80%. We found that the thickness and roughness of the zirconium oxide thin films are relatively constant. The XRD revealed that the deposited thin films have polycrystalline phases, Zr(101) and monoclinic ZrO2 (131). The XPS result showed that the oxidation states of zirconium suboxides were changed to zirconia form with increasing O2 gas ratio.

【 授权许可】

Unknown