Enhancing the efficiency of the gallium indium nitride (InGaN) solar cell by optimizing the effective parameters

Chalcogenide Letters

article

A. Bouadi¹  H. Naim¹  A. Djelloul³  Y. Benkrima⁴  R. Fares⁵ 

[1] Laboratory for Analysis and Applications of Radiation ,(LAAR), Department of Physics, University of Science and Technology of Oran;Laboratory of Thin Films Physics and Materials for Electronics ,(LPCMME),University Of Oran1;Centre de Recherche en Technologie des Semi-Conducteurs pour l’Energétique ‘CRTSE’ 02 Bd Frantz Fanon. BP 140. 7 Merveilles. Alger. Algérie;Ecole normale supérieure de Ouargla;LGIDD, Faculty of SESNV, University of Relizane

关键词: InGaN;    Solar cells;    Optimization;    PC1D;   

DOI  :  10.15251/CL.2022.199.611

学科分类：物理（综合）

来源: Forum of Chalcogeniders

【 摘 要 】

The present work aims to improve the power and the conversion efficiency of solar cells, using the PC1D simulator, to study the performances of the solar cells based on (InGaN). The paper focuses first on optimization of the technological and geometrical parameters such as doping and the thickness of the layers to investigate their influence on the conversion efficiency of these structures. Then, the paper evaluates the efficiency η for the solar cell with and without Anti-reflection coating ARC on textured surfaces to achieve a final increase of 22.5% of conversion efficiency compared to InGaN standard solar cells.

【 授权许可】

Free