Novel High Efficiency Photovoltaic Devices Based on the III-N Material System. Final Technical Report, 7 December 2005-29 August 2008.

Honsberg, C. ; Doolittle, W. A. ; Ferguson, I.

Technical Information Center Oak Ridge Tennessee

关键词: Photovoltaics;    Solar cells;    Solar energy;    Efficiency;    Optimization;   

RP-ID  :  DE2008940680

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

The current work by University of Delaware researchers sought to understand InGaN as the potential material for photovoltaics. Phase separation was identified as a key loss mechanism. Phase-separated material (a lower bandgap) controls the open-circuit voltage, while the non-phase separated material (higher bandgap) controls the absorption. Phase separation in InGaN layers was controlled via optimization of growth conditions and device thickness.