A 280nW leakage-ratio-based CMOS temperature sensor with supply/clock sensitivity suppression

IEICE Electronics Express

article

Hangyi Lu¹ 

[1] Institute of VLSI Design, Zhejiang University

关键词: temperature sensor;    subthreshold;    CMOS integrated circuit;    ultra-low-power;   

DOI  :  10.1587/elex.19.20220223

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

This paper presents a low-cost digital temperature sensor for radio frequency identification (RFID). The proposed sensor utilizes the leakage channel current ratio of different transistors with exponential temperature dependence, which results in ultra-low-power consumption and compact size. Thanks to a dual-differential scheme, it can operate without any extra assistance from a voltage regulator or accurate clock generator. The sensor is fabricated in a standard 55nm CMOS process, and measurement results show that the proposed design achieves an inaccuracy of +0.8/-0.75°C between -20 and 80°C while occupying a silicon area of only 5700µm2. Beneficial from the low total capacitance, the power consumption is 280nW, and the conversion time is 37ms.

【 授权许可】

CC BY