A high-linearity 24-32-GHz amplifier with AM-AM/PM compensation technology for 5G applications

IEICE Electronics Express

article

Chunying Sun¹  Zonglin Ma²  Kaixue Ma¹  Haipeng Fu¹  Xiangyang Duan³  Jianli Liu³  Yenan Bie³ 

[1] School of Microelectronics, Tianjin University;School of Physics, University of Electronic Science and Technology of China;ZTE Corporation

关键词: high linearity;    broadband;    amplifier;    SiGe BiCMOS;   

DOI  :  10.1587/elex.18.20210457

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

This paper presents a compact 24-32GHz high-linearity broadband, fully integrated amplifier which is designed in 130-nm SiGe (BiCMOS). The principle of improving the linearity of degeneration inductor and the effect of the driving stage on linearity are analyzed. To achieve flat broadband, the transformer is also used in the inter-stage matching. Output matching for low insertion loss networks has been selected carefully. The amplifier demonstrates a small signal gain of 11.3dB range from 24GHz to 32GHz with a gain flatness of ±0.5dB. Measurements show a maximum power added efficiency (PAE) of 18.54% with output 1dB compression power for 7.6dBm at 32GHz.

【 授权许可】

CC BY