Design of broadband high-gain GaN MMIC power amplifier based on reactive/resistive matching and feedback technique

IEICE Electronics Express

article

Lin Peng¹  Jianqiang Chen¹  Zhihao Zhang¹  Yang Huang²  Tong Wang²  Gary Zhang¹ 

[1] School of Information Engineering, Guangdong University of Technology;Sichuan YiFeng Electronic Science & Technology Co., Ltd.

关键词: gallium nitride (GaN);    monolithic microwave integrated circuit (MMIC);    broadband power amplifier;    feedback;   

DOI  :  10.1587/elex.18.20210313

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

This paper presents a K-band two-stage power amplifier (PA) with a compact circuit size of 1.8×0.87mm2. To guarantee broadband high-gain output performance, the optimal impedance domain and power cell are determined through load/source-pull simulation and K-point method, respectively. Reactive/resistive matching networks are carefully employed to reduce the equivalent gate capacitance, improve stability and compensate for the device’s negative gain roll-off slope. Meanwhile, combining with feedback technique adopted in driver stage, the entire operation bandwidth can be further extended. Under 12V pulse voltage supply, 37.4% of peak power-added efficiency (PAE) at 26GHz and 24±0.5dB of small-signal gain, 30.3-31.6dBm of saturated output power (Psat) across 22-27GHz are obtained as shown in the experimental results.

【 授权许可】

CC BY