Design of 18–40 GHz GaN reactive matching power amplifiers using one‐order and two‐order synthesised transformer networks

IET Microwaves, Antennas & Propagation

Liwei Luo¹  Qiyu Wang¹  Yunqiu Wu²  Yuehang Xu²  Bo Yan²  Yang Chen²  Yong Zhang²  Ruimin Xu² 

[1] Sichuan Yi Feng Electronic Technology Co., Ltd Chengdu China;University of Electronic Science and Technology of China Chengdu China;

关键词: broadband power amplifier;    gallium nitride;    millimetre‐wave;    reactive matching;    synthesised transformer network;   

DOI  :  10.1049/mia2.12221

来源: DOAJ

【 摘 要 】

Abstract A reactive matching (RM) power amplifier (PA) can achieve higher efficiency than a distributed amplifier (DA). In this paper, RM PAs that cover 18–40 GHz are proposed by using one‐order and two‐order synthesised transformer networks (STNs) with GaN on Si technology. In this band, the PAs can provide ≥30 dBm and ≥31.9 dBm output power, with power‐added efficiency (PAE) of ≥17% and ≥15% in the continuous mode, respectively. Further, STNs are analysed using the transmission poles method (TPM) instead of the resonant frequency method (RFM). Thus, the limitations of output power and bandwidth are comprehensively derived. In the one‐order STN, the impedance transformation ratio (T1N) has a maximum value (TMAX_1N), limiting the output power. A two‐order STN is proposed, and the impedance transformation ratio maximum (TMAX_2N) can be improved to (TMAX_1N)2. The result of this paper will be helpful for wideband high‐power amplifier applications.

【 授权许可】

Unknown