Design of a Broadband MMIC Driver Amplifier with Enhanced Feedback and Temperature Compensation Technique

Electronics

Yuepeng Yan¹  Jinxiang Zhao¹  Zhe Yang¹  Shengli Zhang¹  Xiaoxin Liang¹  Jing Wan¹ 

[1] Communication Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

关键词: monolithic microwave integrated circuit;    broadband power amplifier;    GaN pHEMT;    feedback technique;    temperature compensation;   

DOI  :  10.3390/electronics11030498

来源: DOAJ

【 摘 要 】

This paper presents a broadband GaN pseudo high-electron-mobility transistor (pHEMT) two-stage driver amplifier based on an enhanced feedback technique for a wideband system. Through well-designed parameter values of the feedback and the matching structure of the circuit, a relatively flat frequency response was obtained over a wide frequency band. Simultaneously, in order to reduce the fluctuation of current caused by the environmental temperature, a bias circuit with quiescent current temperature compensation was designed. The driver power amplifier, which was implemented in the form of a monolithic microwave integrated circuit (MMIC), was designed to drive a broadband high-power amplifier. The designed broadband driver amplifier for the 6 GHz to 20 GHz frequency band had a very small die size of 1.5 × 1.2 mm${}^2$ due to the use of an optimized impedance matching structure. It exhibited a small-signal gain of 12.5 dB and output power of 26 dBm. The flatness of this driver amplifier for gain and output power was achieved as ±2.5 dB and ±1 dB over the entire frequency band, respectively. The experimental results showed up to 35 dBm in the OIP3, and the current variation range was ±5 mA after using the temperature compensation bias circuit.

【 授权许可】

Unknown