Heterointerface effects on the charging energy of the shallow D- ground state in silicon: Role of dielectric mismatch

Article

关键词: SI;    TRANSISTORS;    GERMANIUM;    ACCEPTORS;    SYSTEMS;    DONORS;    FIELD;    ATOM;   

DOI  :  10.1103/PhysRevB.82.075317

来源: SCIE

【 摘 要 】

Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. Experimental results indicate a strong reduction in the charging energy of isolated As dopants in Si nonplanar field effect transistors relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured reduction in the charging energy (measurements also presented here) may be due to a combined effect of the insulator screening and the proximity of metallic gates.

【 授权许可】

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