Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon

Article

关键词: INDIRECT ENERGY-GAP;    TEMPERATURE-DEPENDENCE;    ISOTOPE DEPENDENCE;    SINGLE-CRYSTAL;    ABSORPTION;    DIAMOND;    SI;    GE;    LUMINESCENCE;    GERMANIUM;   

DOI  :  10.1103/PhysRevB.70.193201

来源: SCIE

【 摘 要 】

Photoluminescence and wavelength-modulated transmission spectra displaying phonon-assisted indirect excitonic transitions in isotopically enriched Si-28, Si-29, Si-30, as well as in natural Si, have yielded the isotopic mass (M) dependence of the indirect excitonic gap (E-gx) and the relevant phonon frequencies. Interpreting these measurements on the basis of a phenomenological theory for (partial derivativeE(gx)/partial derivativeM), we deduce E-gx(M=infinity)=(1213.8+/-1.2) meV, the purely electronic value in the absence of electron-phonon interaction and volume changes associated with anharmonicity.

【 授权许可】

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