Mn 3d partial density of states in Ga1-xMnxAs studied by resonant photoemission spectroscopy

Article

关键词: DILUTED MAGNETIC SEMICONDUCTORS;    III-V;    MAGNETOTRANSPORT PROPERTIES;    ABSORPTION;    CD1-XMNXTE;   

DOI  :  10.1103/PhysRevB.59.R2486

来源: SCIE

【 摘 要 】

We have obtained the Mn 3d partial density of states in Ga1-xMnxAs using the resonance photoemission technique as well as by means of the difference between Ga1-xMnxAs and GaAs. We have observed a strong satellite structure on the higher binding energy side of the main peak, as in Mn-doped II-VI compounds such as Cd1-xMnxTe. Based on analysis using configuration-interaction calculation for a MnAs4 cluster, we could ascribe the spectral features to strong Mn 3d-As 4p hybridization and Mn 3d-3d Coulomb interaction. [S0163-1829(99)50904-1].

【 授权许可】

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