Intrasubband and intersubband electron relaxation in semiconductor quantum wire structures | |
Article | |
关键词: EXCITATION SPECTRUM; PHONON SYSTEM; GAS; SPECTROSCOPY; DISPERSION; LIFETIME; | |
DOI : 10.1103/PhysRevB.63.045324 | |
来源: SCIE |
【 摘 要 】
We calculate the intersubband and intrasubband many-body inelastic Coulomb scattering rates due to electron-electron interaction in two-subband semiconductor quantum wire structures. We analyze our relaxation rates in terms of contributions from inter- and intrasubband charge-density excitations separately. We show that the intersubband (intrasubband) charge-density excitations are primarily responsible for intersubband (intrasubband) inelastic scattering. We identify the contributions to the inelastic-scattering rate coming from the emission of the single-particle and the collective excitations individually. We obtain the lifetime of hot electrons injected in each subband as a function of the total charge density in the wire.
【 授权许可】
Free