Nonlinear resistivity and heat dissipation in monolayer graphene

Article

关键词: FIELD-EFFECT TRANSISTORS;    ENERGY-DISSIPATION;    ELECTRONICS;    TRANSPORT;    DEVICES;    SINGLE;   

DOI  :  10.1103/PhysRevB.85.161411

来源: SCIE

【 摘 要 】

We have experimentally studied the nonlinear nature of electrical conduction in monolayer graphene devices on silica substrates. This nonlinearity manifests itself as a nonmonotonic dependence of the differential resistance on applied dc voltage bias across the sample. At temperatures below similar to 70 K, the differential resistance exhibits a peak near zero bias that can be attributed to self-heating of the charge carriers. We show that the shape of this peak arises from a combination of different energy dissipation mechanisms of the carriers. The energy dissipation at higher carrier temperatures depends critically on the length of the sample. For samples longer than 10 mu m the heat loss is shown to be determined by optical phonons at the silica-graphene interface.

【 授权许可】

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