Tunable thermal quenching of photoluminescence in Mg-doped p-type GaN

Article

关键词: TEMPERATURE-DEPENDENCE;    BAND;    LUMINESCENCE;   

DOI  :  10.1103/PhysRevB.87.115205

来源: SCIE

【 摘 要 】

We have studied the thermal quenching of the ultraviolet luminescence band with a maximum at about 3.25 eV in p-type Mg-doped GaN. The characteristic temperature of the thermal quenching of photoluminescence (PL) gradually shifted to higher temperatures with increasing excitation intensity. This effect is explained by a population inversion of charge carriers at low temperatures, which suddenly converts into a quasiequilibrium population as the temperature increases above the characteristic value. Tunable quenching of PL has been observed only in some of the GaN:Mg samples. The absence of the tunable quenching of PL in another group of GaN: Mg samples is preliminarily attributed to different types of dominant nonradiative defects in the two groups of samples.

【 授权许可】

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